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With Daniel CHAN

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Professor

Daniel CHAN

Professor
Faculty Coach
PhD in Electrical Engineering, University of Salford, Manchester, United Kingdom
Cluster:
Engineering
Email

SIT Appointments

  • Professor
    – Present
  • Faculty Coach
    – Present

Education

  • PhD in Electrical Engineering
    University of Salford, Manchester , United Kingdom

Achievements

  • Awarded the IEEE Third Millennium Medal in recognition of valued services and outstanding contributions to IEEE in 2000.
  • Best paper Award, 26th International Symposium for Test & Failure Analysis, held in Bellevue, Washington, USA, November 2000.
  • NUS Outstanding Researcher Award for 1997. This was awarded to our research team for our invention and development of the Spectroscopic Photon Emission Microscope which has been commercialised.
  • Institution of Engineers Singapore Innovators Award 1996 for the development of the Spectroscopic Photon Emission Microscope.

Professional Memberships

  • Senior member, IEEE

Corporate Experience

  • Member of the Board of Directors, Data Storage Institute
    – Present
  • Member of Advisory Committee on Electronic Engineering, Chinese University of Hong Kong
    –
  • Member of the Advisory Committee, Data Storage Institute
    –
  • Member of International Advisory Committee, Eindhoven University of Technology, The Netherlands, Faculty of Industrial Design
    –
  • Member of the Board of Governors, Singapore Polytechnic
    –
  • Member of the Board of Directors, Institute of Systems Science
    –
  • Co-founder of a technology spin-off company, SEMICAPS Pte Ltd
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Current Projects

  • Semiconductor devices and technologies
    Present
  • Integrated circuit analysis techniques
    Present
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Journal Papers

  • DSH Chan and HH Chng, (2013) Broadening students’ Experience: A Singapore Perspective, in The Global Student experience: An International and Comparative Analysis, 1st Edition, ed. Camille Kandiko and Mark Weyers, pp212-227, International Studies in Higher Education, ISBN 978-0-415-80926-9, New York & London: Routledge.

  • G Liu, B Zhang, Y Chen, Chunxiang Zhu, LG Zeng, D S H Chan, K G Neoh and E T Kang (2011), Electrical Conductivity Switching and Memory Effects in PVK Derivatives with Pendant Azobenzene Chromophores and Terminal Electron Acceptor Moieties. Journal of Materials Chemistry, 21: 6027-6033.

  • L Zhang, W He, D S H Chan and BJ Cho, (2010) "High Performance MIM Capacitors Using HfLaO-Based Dielectrics". IEEE Electron Device Letters, 31, no. 1 (2010): 17-19.

  • S Wang, J Pu, D S H Chan, BJ Cho and K P Loh, (2010), Wide memory window in graphene oxide charge storage nodes. Applied Physics Letters, 96, no. 14.

  •  Y Jiang, N Singh, T Liow, GQ Lo, DSH Chan, D Kwong, (2009) “Omega-gate p-MOSFET with nanowire-like SiGe/Si Core/Shell Channel”, IEEE Electron Devices, 30, no 4: 392-394.

  • W He, J Pu, D S H Chan* and BJ Cho, (2009) "Performance Improvement in Charge-Trap Flash Memory Using Lanthanum-Based High-kappa Blocking Oxide". IEEE Transactions on Electron Devices, 56, no. 11 : 2746-2751.

  • DSH Chan, EI Rau, YY Liu, R Sennou, AV Gostev, JCH Phang, (2004) Microtomography and improved resolution in cathodoluminescence microscopy using confocal micro optics. Review of Scientific Instruments, Vol 75, no. 10, 3191-3199

  • JM Tao, DSH Chan, WK Chim, (1996), Spectrosocpic Observations of emissions from nMOSFETs in the saturation region, Journal of Physics D: Appl Phys, 29, 1380-1385.

  • Y.Y. Liu,  JM Tao, DSH Chan, JCH Phang, WK Chim (1995), A new spectroscopic photon emission microscope system for semiconductor device analysis, Proceedings of the 5th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Singapore.

  • KL Pey, J C H Phang and D S H Chan, (1993) Investigation of dislocations in GaAs using cathodoluminescence in the scanning electron microscope, Scanning Microscopy, 7, no.4,  1195-1206.

  • DSH Chan and JCH Phang, (1983) Analytical methods for the extraction of solar-cell single- and double-diode model parameters from I-V characteristics, IEEE Transactions on Electron Devices Vol 34, 286-293.

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